BQ26501_16 Datasheet, PDF (10/33 Pages) Texas Instruments – HANDHELD APPLICATIONS

bq26501
Not Recommended For New Designs
ą
SLUS586B − OCTOBER 2003 − REVISED MARCH 2004
APPLICATION INFORMATION
Register Interface for bq26501
The bq26501 stores all calculated information in RAM, which is backed up by the voltage present on the RBI
pin. EEPROM registers store permanent user data. The memory map for bq26501 is shown in Table 1.
Table 1. bq26501 Memory Map
HDQ ADDRESS
NAME
FUNCTION (256 x High Byte + Low Byte)
EEPROM Registers
0x7F
TCOMP Temperature compensation constants, OR, ID#1
0x7E
DCOMP Discharge rate compensation constants, OR, ID#2
0x7D
ID3
ID#3
0x7C
PKCFG Pack configuration values
0x7B
TAPER Charge termination taper current
0x7A
DMFSD Digital magnitude filter and self-discharge rate constants
0x79
ISLC
Initial standby load current
0x78
SEDV1 Scaled EDV1 threshold
0x77
SEDVF Scaled EDVF threshold
0x76
ILMD
Initial last measured discharge high byte
RAM Registers
0x6F − 0x75
−
RESERVED
0x6E
EE_EN EEPROM program enable
0x14 − 0x6D
−
RESERVED
0x13 − 0x12
LMD
Last measured discharge high − low byte
0x11 − 0x10
CACT
Temperature compensated CACD high – low byte
0x0F − 0x0E
CACD
Discharge compensated NAC high − low byte
0x0D − 0x0C
NAC
Nominal available capacity high − low byte
0x0B
RSOC
Relative state of charge
0x0A
FLAGS Status flags
0x09 − 0x08
VOLT
Reported voltage high − low byte
0x07 − 0x06
TEMP
Reported temperature high − low byte
0x05 − 0x04
ARTTE At rate time-to-empty high − low byte
0x03 − 0x02
AR
At rate high − low byte
0x01
MODE
Device mode register
0x00
CTRL
Device control register
(1) _{Divide by RS(mΩ) to convert µV to mA or µVh to mAh.}
LSB VALUE
192 µV(1)
6 µV(1)
768 µVh(1)
3 µVh(1)
3 µVh(1)
3 µVh(1)
3 µVh(1)
1%
1 mV
0.25°K
1 minute
3 µV(1)
10
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