OMAP3503DCBBA Datasheet, PDF (53/264 Pages) Texas Instruments – OMAP3515 and OMAP3503 Applications Processors

OMAP3515, OMAP3503
www.ti.com
SPRS505H – FEBRUARY 2008 – REVISED OCTOBER 2013
Table 2-2. Ball Characteristics (CBC Pkg.)⁽¹⁾ (continued)
BALL
BALL TOP PIN NAME
BOTTOM [1]
[2]
[3]
MODE [4]
gpio_191
4
safe_mode
7
V19
NA
hsusb0_dir
0
W18
gpio_122
4
safe_mode
7
NA
hsusb0_nxt
0
gpio_124
4
safe_mode
7
U20
NA
hsusb0_stp
0
gpio_121
4
safe_mode
7
U15
NA
jtag_ntrst
0
W13
NA
jtag_rtck
0
V14
NA
jtag_tck
0
U16
NA
jtag_tdi
0
Y13
NA
jtag_tdo
0
V15
NA
jtag_tms_tms
0
c
N19
NA
mmc1_clk
0
gpio_120
4
safe_mode
7
L18
NA
mmc1_cmd
0
gpio_121
4
safe_mode
7
M19
NA
mmc1_dat0
0
gpio_122
4
safe_mode
7
M18
NA
mmc1_dat1
0
gpio_123
4
safe_mode
7
K18
NA
mmc1_dat2
0
gpio_124
4
safe_mode
7
N20
NA
mmc1_dat3
0
gpio_125
4
safe_mode
7
M20
NA
mmc1_dat4
0
gpio_126
4
safe_mode
7
P17
NA
mmc1_dat5
0
gpio_127
4
safe_mode
7
P18
NA
mmc1_dat6
0
gpio_128
4
safe_mode
7
TYPE [5]
IO
-
I
IO
-
I
IO
-
O
IO
-
I
O
I
I
O
IO
O
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
IO
IO
-
BALL
RESET
STATE [6]
BALL
RESET REL.
STATE [7]
RESET REL.
MODE [8]
POWER [9]
HYS [10]
BUFFER PULLUP
STRENG TH /DOWN IO CELL [13]
(mA) [11] TYPE [12]
L
L
7
vdds
Yes
4 ⁽⁷⁾
PU100/
LVCMOS
PD100
L
L
7
vdds
Yes
4 ⁽⁷⁾
PU100/
LVCMOS
PD100
H
H
7
vdds
Yes
4 ⁽⁷⁾
PU100/
LVCMOS
PD100
L
L
0
vdds
Yes
NA
PU100/
LVCMOS
PD100
L
0
0
vdds
Yes
4
PU100/
LVCMOS
PD100
L
L
0
vdds
Yes
NA
PU100/
LVCMOS
PD100
H
H
0
vdds
Yes
NA
PU100/
LVCMOS
PD100
L
Z
0
vdds
Yes
4
PU100/
LVCMOS
PD100
H
H
0
vdds
Yes
4
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1
Yes
8
PU100/
LVCMOS
PD100
L
L
7
vdds_mmc1a
No
8
PU/PD ⁽⁸⁾
LVCMOS
L
L
7
vdds_mmc1a
No
8
PU/PD ⁽⁸⁾
LVCMOS
L
L
7
vdds_mmc1a
No
8
PU/PD ⁽⁸⁾
LVCMOS
(8) The PU nominal drive strength of this IO cell is equal to 25 mA @ 1.8 V and 41.6 mA @ 3.0 V. The PD nominal drive strength of this IO
cell is equal to 1 mA @ 1.8 V and 1.66 mA @ 3.0 V.
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