BQ26220 Datasheet, PDF (4/19 Pages) Texas Instruments – HIGH PERFORMANCE BATTERY MONITOR IC WITH COULOMB COUNTER, VOLTAGE AND TEMPERATURE MEASUREMENT

bq26220
SLUS521B − AUGUST 2002 − REVISED FEBRUARY 2004
VFC characteristics over recommended operating temperature and supply voltage (unless
otherwise noted)
VI(SR)
G(VFC)
G(VCC)
G(TCO)
INL
V(COS)
PARAMETER
Input voltage VSRP − VSRN
Charge/discharge gain
Supply voltage gain coefficient
Temperature gain coefficient
Integrated nonlinearity
Auto compensated offset
TEST CONDITIONS
Temperature = 25 _C,
VCC = 3.6
−100 mV < (V(SRP) − V(SRN)) < 100 mV
−100 mV < (V(SRP) − V(SRN)) < 100 mV
2.8 V ≤ VCC ≤ 4.2 V
MIN
−100
88
−20
TYP
91
0.5
0.005
0.2%
−1
MAX
100
94
0.5%
20
UNIT
mV
Hz/V
%/V
%/_C
µV
flash memory characteristics over recommended operating temperature and supply voltage
(unless otherwise noted)
PARAMETER
Data retention
Flash programming write-cycles
t(BYTEPROG) Byte programming time
RAM-to-flash block programming
t(BLCKPROG) _time
t(BLKERASE) Block-erase time
TEST CONDITIONS
60 µs + 30 µs/byte
60 µs + 30 µs/byte
MIN TYP
10,000
MAX
5
90
UNIT
Years
Cycles
1020 µs
1020
standard serial communication (HDQ) timing specification over recommended operating
temperature and supply voltage (unless otherwise noted). See Figures 1 and 2.
PARAMETER
TEST CONDITIONS
MIN TYP MAX UNIT
T(B)
Break timing
190
T(BR)
Break recovery
40
T(CYCH)
Host bit window
190
T(HW1)
Host sends 1
32
50 µs
T(HW0)
Host sends 0
100
145
T(RSPS)
bq26220 to host response
190
320
T(CYCB)
bq26220 bit window
190
250
T(start−detect) (1)
5
ns
T(DW1)
T(DW0)
bq26220, sends 1
bq26220, sends 0
32
50
µs
80
145
NOTE 1. The HDQ engine of the bq26220 interpret a 5 ns or longer glitch on HDQ as a bit start. A sufficient number of glitches at 5 ns or longer
could result in incorrect data being written to the device. The HDQ line should be properly deglitched to ensure that this does not occur.
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