BQ26220 Datasheet, PDF (11/19 Pages) Texas Instruments – HIGH PERFORMANCE BATTERY MONITOR IC WITH COULOMB COUNTER, VOLTAGE AND TEMPERATURE MEASUREMENT

bq26220
SLUS521B − AUGUST 2002 − REVISED FEBRUARY 2004
APPLICATION INFORMATION
register interface
Information is exchanged between host system and the bq26220 through the data-register interface. See
Table 4 below. The register set consists of a 122-location address space of 8-bit bytes segmented into
• 8 bytes of factory programmed ID ROM
• 32 bytes of flash shadowed RAM
• 64 bytes of general purpose flash
• 18 special function registers
HDQ
ADDRESS
0x78−0x7F
0x73−0x77
0x72
0x71
0x70
0x6F
0x6E
0x6D
0x6C
0x6B
0x6A
0x69
0x68
0x67
0x66
0x65
0x64
0x63
0x62
0x61
0x60
0x40−0x5F
0x20−0x3F
0x00−0x1F
NAME
IDROM
−
BATH
BATL
FPA
FPD
DCRH
DCRL
CCRH
CCRL
SCRH
SCRL
DTCH
DTCL
CTCH
CTCL
MODE
CLR
FCMD
TEMPH
TEMPL
Flash
Flash
RAM/flash
Table 4. Memory Map
BIT7
BIT6
BIT5
BIT4
BIT3
BIT2
BIT1
BIT0
8 bytes of factory-programmed ROM and gain correction factor for BATH and BATL
Reserved
BV−SIGN BVOS3
BVOS2
BVOS1
BVOS0
Battery voltage (bits 8 through 10)
Battery voltage (bits 0 through 7)
Flash program address byte
Flash program data byte
Discharge count register-high byte
Discharge count register-low byte
Charge count register-high byte
Charge count register-low byte
Self-discharge count register-high byte
Self−discharge count register-low byte
Discharge timer counter register-high byte
Discharge timer count register-low byte
Charge timer counter register-high byte
Charge timer counter register-low byte
GPIEN
STAT
STC
STD
WOE2
WOE1
WOE0
POR
RSVD
RSVD
RSVD
CTC
DTC
SCR
CCR
DCR
Flash/control command register
Temperature-high byte (bits 0 through 2 only, other bits are reserved)
Temperature-low byte
Page 2, 32 bytes of flash
Page 1, 32 bytes of flash
Page 0, 32 bytes of flash shadowed RAM
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