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DRV5013_15 Datasheet, PDF (3/27 Pages) Texas Instruments – DRV5013 Digital-Latch Hall Effect Sensor
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DRV5013
SLIS150C – MARCH 2014 – REVISED SEPTEMBER 2014
the graph condition statements ............................................................................................................................................. 7
• Deleted Number from the Power-On Time case names and added conditions to the captions of the case timing
diagrams .............................................................................................................................................................................. 11
• Added the R1 tradeoff and lower current text after the equation in the Output Stage section ........................................... 13
• Added the C2 not required for most applications text after the second equation in the Output Stage section.................... 14
• Changed IO to ISINK in the condition statement of the FET overload fault condition in the Reverse Supply Protection
section .................................................................................................................................................................................. 15
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