DRV5013_15 Datasheet, PDF (16/27 Pages) Texas Instruments – DRV5013 Digital-Latch Hall Effect Sensor

DRV5013
SLIS150C – MARCH 2014 – REVISED SEPTEMBER 2014
9 Application and Implementation
www.ti.com
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
9.1 Application Information
The DRV5013 device is used in magnetic-field sensing applications.
9.2 Typical Application
C2
680 pF
(Optional)
OUT
2
3
R1
10 kŸ V_CC
1 ^VCC
C1
0.01 µF
(minimum)
Figure 18. Typical Application Circuit
9.2.1 Design Requirements
For this design example, use the parameters listed in Table 1 as the input parameters.
DESIGN PARAMETER
Supply voltage
System bandwidth
9.2.2 Detailed Design Procedure
Table 1. Design Parameters
REFERENCE
V_CC
ƒ_BW
EXAMPLE VALUE
3.2 to 3.4 V
10 kHz
Table 2. External Components
COMPONENT
C1
C2
R1
PIN 1
V_CC
OUT
OUT
PIN 2
GND
GND
REF ⁽¹⁾
RECOMMENDED
A 0.01-µF (minimum) ceramic capacitor rated for V_CC
Optional: Place a ceramic capacitor to GND
Requires a resistor pullup
(1) REF is not a terminal on the DRV5013 device, but a REF supply-voltage pullup is required for the OUT terminal; the OUT terminal may
be pulled up to V_CC.
16
Submit Documentation Feedback
Product Folder Links: DRV5013
Copyright © 2014, Texas Instruments Incorporated