TDA7333N Datasheet, PDF (8/36 Pages) STMicroelectronics – RDS/RBDS processor

Electrical specifications
2
Electrical specifications
TDA7333N
2.1
Absolute maximum ratings
Table 3. Absolute maximum ratings
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_DD 3.3 V power supply voltages
-0.5
4
V
V_in Input voltage
5 V tolerant inputs
-0.5
5.5 V
V_out Output voltage
5 V tolerant output buffers in tri-state -0.5
5.5 V
T_stg Storage temperature
-55
150 °C
Human body model
≥ ±2000
V
V_ESD ESD withstand voltage
Machine model
≥ ±200
V
Charged device model, corner pins
≥ ±1000
V
2.2
General interface electrical characteristics
Table 4. General interface electrical characteristics
Symbol
Parameter
Test conditions
I_il
I_ih
I_ozFT
Low level input current
High level input current
Five volt tolerant tri-state
output leakage without pull
up/down device
V_i =0 V
V_i =V_DD
V_o =0 V or V_DD
V_o =5.5 V
Min. Typ. Max. Unit
1
µA
1
µA
1
µA
1
3
µA
2.3
Electrical characteristics
Table 5.
Symbol
Electrical characteristics
T_amb = -40 to +85 °C, V_DDA/V_DDD = 3.0 to 3.6 V, f_osc = 8.55 MHz, unless otherwise specified
V_DDD and V_DDA must not differ more than 0.15 V
Parameter
Test conditions
Min. Typ. Max. Unit
Supply (pin 1,5,7)
V_DDD
V_DDA
Digital supply voltage
Analog supply voltage
I_DDD Digital supply current
I_DDA Analog supply current
Normal mode
Power down mode
Normal mode
Power down mode
3.0
3.3
3.6
V
3.0
3.3
3.6
V
14
mA
<1
µA
11.7
mA
<1
mA
8/36