M39432 Datasheet, PDF (5/28 Pages) STMicroelectronics – Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM

M39432
Table 4. Instructions ¹
Instruction EE EF Cycle 1
Cycle 2
Cycle 3
Cycle 4
Cycle 5 Cycle 6 Cycle 7
Read
Manufacturer
Identifier ²
1
0
AAh
55h
@5555h @2AAAh
90h
@5555h
Read Identifier
with (A0,A1,A6)
set to (0,0,0)
Read Flash
Identifier ²
1
0
AAh
55h
@5555h @2AAAh
90h
@5555h
Read Identifier
with (A0,A1,A6)
set to (1,0,0)
Read OTP Row
0
1
AAh
55h
90h
@5555h @2AAAh @5555h
Read
Byte 1
Read
Byte 2
Read
Byte N
Read Sector
Protection Status^{2 1}
0
AAh
55h
90h
@5555h @2AAAh @5555h
Read Identifier
with (A0,A1,A6)
set to (0,1,0)
Program a Byte of
Flash Memory
1
0
AAh
55h
A0h
@5555h @2AAAh @5555h
Data
@ Address
Erase a Sector of
Flash Memory
1
0
AAh
55h
80h
@5555h @2AAAh @5555h
AAh
@5555h
55h
@2AAAh
30h
@ Sector
address
30h
@ Sector
address³
Erase the Whole
of Flash Memory
1
0
AAh
55h
80h
@5555h @2AAAh @5555h
AAh
@5555h
55h
10h
@2AAAh @5555h
Suspend Sector
Erase
B0h
1 0 @any
address
Resume Sector
Erase
30h
1 0 @any
address
EEPROM Power
Down
0
1
AAh
55h
30h
@5555h @2AAAh @5555h
Deep Power
Down
1
0
20h
@5555h
SDP Enable
(EEPROM)
0
1
AAh
55h
A0h
@5555h @2AAAh @5555h
Write
Byte 1
Write
Byte 2
Write
Byte N
SDP Disable
(EEPROM)
0
1
AAh
55h
80h
@5555h @2AAAh @5555h
AAh
@5555h
55h
20h
@2AAAh @5555h
Write OTP Row
0
1
AAh
55h
B0h
@5555h @2AAAh @5555h
Write
Byte 1
Write
Byte 2
Write
Byte N
Return (from OTP
Read or
EEPROM Power
Down)
0
1
F0h
@any
address
Reset
1
0
AAh
@5555h
55h
@2AAAh
F0h
@any
address
Reset (short
instruction)
F0h
1 0 @any
address
Note: 1. AAh @ 5555h means “Write the value AAh at the address 5555h”.
2. This instruction can also be performed as a Verify operation with A9=V_ID (please see the section entitled “Flash Sector Protection
and Unprotection” on page 18).
3. Addresses of additional sectors to be erased must be entered within a time-out of 80 µs of each other.
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