M39432 Datasheet, PDF (21/28 Pages) STMicroelectronics – Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM

M39432
Table 16. Write Mode AC Characteristics (EE or EF controlled)
(T_A = –40 to 85 °C; V_CC = 2.7 V to 3.6 V)
Symbol Alt.
Parameter
-100
Min Max
t_WLWL
t_BLC
Time-out after the last byte write
(EEPROM)
150
t_WHRH t_WC Write Cycle Time (EEPROM)
10
t_AVAV
Address Valid to Next Address Valid
100
t_WLEL
t_WS
Write Enable Low to Memory Block
Enable Low
0
t_ELEH
t_CP
Memory Block Enable Low to Memory
Block Enable High
50
t_DVEH
t_DS
Input Valid to Memory Block Enable
High
50
t_EHDX
t_DH
Memory Block Enable High to Input
Transition
0
t_EHWH
t_WH
Memory Block Enable High to Write
Enable High
0
t_EHEL
t_CPH
Memory Block Enable High to Memory
Block Enable Low
30
t_AVEL
t_AS
Address Valid to Memory Block Enable
Low
0
t_ELAX
t_AH
Memory Block Enable Low to Address
Transition
50
t_GHEL
Output Enable High to Memory Block
Enable Low
0
t_VCHWL t_VCS V_CC High to Write Enable Low
50
t_EHQV11
Memory Block Enable High to Output
Valid (Program)
15
t_EHQV21
Memory Block Enable High to Output
Valid (Sector Erase)
2.0 30
t_EHGL
t_OEH
Memory Block Enable High to Output
Enable Low
0
t_EHRL2
t_DB
EEPROM Block Enable High to Ready/
Busy Output Low
150
Note: 1. Time is measured to Data Polling or Toggle Bit, t_WHQV = t_WHQ7V + t_Q7VQV.
2. With a 3.3 kΩ pull-up resistor.
M39432
-120
Min Max
150
10
120
0
50
50
0
0
30
0
50
0
50
15
2.0 30
0
150
-150
Min Max
150
10
150
0
65
65
0
0
35
0
65
0
50
15
2.0 30
0
150
Unit
µs
ms
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
s
ns
ns
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