M39432 Datasheet, PDF (2/28 Pages) STMicroelectronics – Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM

M39432
Figure 2. TSOP Connections
NC 1
40
NC
A11
A9
A8
A13
A14
A17
W
VCC 10 _M39432 31
A18 11
30
A16
A15
A12
A7
A6
A5
A4
NC
NC 20
21
AI01947
Note: 1. NC = Not Connected.
NC
EE
G
A10
EF
DQ7
DQ6
DQ5
DQ4
DQ3
VSS
DQ2
DQ1
DQ0
A0
A1
A2
A3
R/B
NC
blocks: 4 Mbit of Flash memory and 256 Kbit of
EEPROM. Each block operates independently
during a Write cycle: in concurrent mode, the
Flash Memory can be read while the EEPROM is
being written.
There is also a 64 byte row of OTP (one time
programmable) EPROM.
The M39432 EEPROM block may be written
bytewise or by a page at a time (up to 64 bytes).
The integrity of the data can be secured with the
help of the Software Data Protection (SDP).
The M39432 Flash Memory block offers 8 sectors,
each one 64 KByte in size. Each sector may be
erased individually, and programmed a byte at a
time. Each sector can be separately protected and
unprotected against Program and Erase. Sector
erasure may be suspended, while data is read
from other sectors of the Flash memory block (or
from the EEPROM block), and then resumed. The
Flash memory block is functionally compatible with
the M29W040 (4 Mbit Single Voltage Flash
Memory).
During a Program or Erase cycle in the Flash
memory or during a Write cycle in the EEPROM,
the status of the M39432 internal logic can be read
on the Data Output pins DQ7, DQ6, DQ5 and
DQ3.
SIGNAL DESCRIPTION
Address Inputs (A0-A18)
The address inputs for the memory array are
latched during a write operation. The EEPROM
block is selected by the EE input, and the Flash
memory block the EF input. A0-A14 access
locations in the EEPROM block; A0-A18 access
locations in the Flash memory block.
When V_ID (as specified in Table 11) is applied on
the A9 address input, additional device-specific
information can be accessed:
– Read the Manufacturer identifier
– Read the Flash block identifier
– Read/Write the EEPROM block identifier
– Verify the Flash Sector Protection Status.
Table 2. Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
T_A
Ambient Operating Temperature
–40 to 85
°C
T_BIAS ¹
Temperature Under Bias
–50 to 125
°C
T_STG ¹
Storage Temperature
–65 to 150
°C
V_IO ^1,2
Input or Output Voltage (except A9)
–0.6 to 7
V
V_CC ¹
Supply Voltage
–0.6 to 7
V
V_A9, V_G, V_EF ^1,2 A9, G and EF Voltage
–0.6 to 13.5
V
Note: 1. Stresses above those listed may cause permanent damage to the device. These are stress ratings only and operation of the device
at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Exposure to
Absolute Maximum Rating conditions for extended periods may affect device reliability. Please see the STMicroelectronics SURE
Program and other relevant quality documents.
2. Minimum voltage may undershoot to –2 V, during transition and for less than 20 ns.
2/28