M39432 Datasheet, PDF (23/28 Pages) STMicroelectronics – Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM

M39432
Table 17. Data Polling and Toggle Bit AC Characteristics ¹
(T_A = –40 to 85 °C; V_CC = 2.7 V to 3.6 V)
Symbol Alt.
Parameter
t_WHQ7V12
Write Enable High to DQ7 Valid
(Program, W controlled)
t_WHQ7V22
Write Enable High to DQ7 Valid (Sector
Erase, W controlled)
t_EHQ7V12
Flash Block Enable High to DQ7 Valid
(Program, EF controlled)
t_EHQ7V22
Flash Block Enable High to DQ7 Valid
(Sector Erase, EF controlled)
t_Q7VQV
DQ7 Valid to Output Valid (Data
Polling)
t_WHQV1
Write Enable High to Output Valid
(Program)
t_WHQV2
Write Enable High to Output Valid
(Sector Erase)
t_EHQV1
Flash Block Enable High to Output
Valid (Program)
t_EHQV2
Flash Block Enable High to Output
Valid (Sector Erase)
Note: 1. All other timings are defined in Table 13.
2. t_WHQ7V is the Program or Erase time.
-100
Min Max
10
1.5 30
10
1.5 30
40
10
1.5 30
10
1.5 30
M39432
-120
Min Max
10
1.5 30
10
1.5 30
50
10
1.5 30
10
1.5 30
-150
Min Max
10
1.5 30
10
1.5 30
55
10
1.5 30
10
1.5 30
Unit
µs
s
µs
s
ns
µs
s
µs
s
Table 18. Program, Erase Times and Program, Erase Endurance Cycles (Flash Block)
(T_A = –40 to 85 °C; V_CC = 2.7 V to 3.6 V)
Parameter
Min.
M39432
Typ.
Max.
Chip Program (Byte)
8
Chip Erase (Pre-programmed)
3
30
Chip Erase
10
Sector Erase (Pre-programmed)
1
30
Sector Erase
2
Byte Program
10
Program/Erase Cycles (per Sector)
100,000
Unit
s
s
s
s
s
µs
cycles
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