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M39432 Datasheet, PDF (16/28 Pages) STMicroelectronics – Single Chip 4 Mbit Flash Memory and 256 Kbit Parallel EEPROM
M39432
Table 13. Read Mode AC Characteristics
(TA = –40 to 85 °C; VCC = 2.7 V to 3.6 V)
M39432
Symbol Alt.
Parameter
Test Condition
-100
-120
-150
Unit
Min Max Min Max Min Max
(EE,EF,G) =
tAVAV
tRC
Address Valid to
Next Address Valid
(VIL,VIH,VIL)
or (EE,EF,G) =
100
120
150
ns
(VIH,VIL,VIL)
(EE,EF,G) =
tAVQV
tACC
Access Time: Address Valid
to Output Valid
(VIL,VIH,VIL)
or (EE,EF,G) =
100
120
150 ns
(VIH,VIL,VIL)
tELQX1
tLZ
Chip Enable Low to
Output Transition
G = VIL
0
0
0
ns
tELQV2
tCE
Access Time: Chip Enable
Low to Output Valid
G = VIL
100
120
150 ns
tGLQX1
tOLZ
Output Enable Low to
Output Transition
(EE,EF) = (VIL,VIH)
or
0
(EE,EF) = (VIH,VIL)
0
0
ns
tGLQV2
tOE
Output Enable Low to
Output Valid
(EE,EF) = (VIL,VIH)
or
(EE,EF) = (VIH,VIL)
40
55
55 ns
tEHQX
tOH
Chip Enable High to
Output Transition
G = VIL
0
0
0
ns
tEHQZ1
tHZ
Chip Enable High to
Output Hi-Z
G = VIL
30
40
40 ns
tGHQX
tOH
Output Enable High to
Output Transition
(EE,EF) = (VIL,VIH)
or
0
(EE,EF) = (VIH,VIL)
0
0
ns
tGHQZ1
tDF
Output Enable High to
Output Hi-Z
(EE,EF) = (VIL,VIH)
or
(EE,EF) = (VIH,VIL)
30
40
40 ns
(EE,EF,G) =
tAXQX
tOH
Address Transition to Output
Transition
(VIL,VIH,VIL)
or (EE,EF,G) =
0
0
0
ns
(VIH,VIL,VIL)
tEHFL
tCED
EE Active to EF Active
or EF Active to EE Active
100
100
100
ns
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to tELQV - tGLQV after the falling edge of EE (or EF) without increasing tELQV.
Table 14. Input and Output Parameters1 (TA = 25 °C, f = 1 MHz)
Symbol
Parameter
Test Condition
CIN Input Capacitance
VIN = 0V
COUT Output Capacitance
Note: 1. Sampled only, not 100% tested.
VOUT = 0V
Min.
Max.
6
12
Unit
pF
pF
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