LSM303D Datasheet, PDF (19/52 Pages) STMicroelectronics – Embedded temperature sensor

LSM303D
5
Application hints
Application hints
Figure 5. LSM303D electrical connections
Vdd
C₃= 10µF
C₄ = 100nF
Vdd_IO
C₂=0.22µF
16
1
C₁= 4.7µF
14
13
TOP VIEW
5
6
9
8
INT 1
INT 2
GND
Digital signal from/to signal controller. Signal levels are defined by proper selection of Vdd_IO
AM12678V1
5.1
External capacitors
The C₁ and C₂ external capacitors should be low SR value ceramic type construction (typ.
recommended value 200 m). Reservoir capacitor C₁ is nominally 4.7 μF in capacitance,
with the set/reset capacitor C₂ nominally 0.22 μF in capacitance.
The device core is supplied through the Vdd line. Power supply decoupling capacitors
(C₄ = 100 nF ceramic, C₃ = 10 μF Al) should be placed as near as possible to the supply pin
of the device (common design practice). All the voltage and ground supplies must be
present at the same time to have proper behavior of the IC (refer to Figure 5).
The functionality of the device and the measured acceleration/magnetic field data is
selectable and accessible through the I²C/SPI interfaces.
The functions, the threshold and the timing of the two interrupt pins (INT 1 and INT 2) can be
completely programmed by the user through the I²C/SPI interfaces.
5.2
Pull-up resistors
If an I²C interface is used, pull-up resistors (recommended value 10 k) must be placed on
the two I²C bus lines.
DocID023312 Rev 2
19/52
52