LSM303D Datasheet, PDF (11/52 Pages) STMicroelectronics – Embedded temperature sensor

LSM303D
Module specifications
Symbol
Table 3. Sensor characteristics (continued)
Parameter
Test conditions
Min. Typ.⁽¹⁾ Max.
M_CAS
M_EF
M_DF
LA_ST
Top
Magnetic cross-axis sensitivity
Maximum exposed field
Magnetic disturbance field
Linear acceleration self-test
positive difference⁽⁶⁾
Operating temperature range
Cross field = 0.5 gauss
Applied = ±3 gauss
No permanent effect on sensor
performance
Sensitivity starts to degrade.
Automatic S/R pulse restores
the sensitivity⁽⁵⁾
±2 g range, X-, Y-axis
70
AST = 1 see Table 37
±2 g range, Z-axis
70
AST = 1 see Table 37
-40
±1
10000
20
1700
1700
+85
1. Typical specifications are not guaranteed.
2. Verified by wafer level test and measurement of initial offset and sensitivity.
3. Typical zero-g level offset value after MSL3 preconditioning.
4. Offset can be eliminated by enabling the built-in high-pass filter.
5. Set/reset pulse is automatically applied at each conversion cycle.
6. “Self-test output change” is defined as: OUTPUT[mg]_{(CTRL2 AST bit =1)} - OUTPUT[mg]_{(CTRL2 AST bit =0)}.
Unit
%FS/
gauss
gauss
gauss
mg
°C
2.2
Temperature sensor characteristics
@ Vdd = 2.5 V, T = 25 °C unless otherwise noted^(b).
Symbol
Table 4. Temperature sensor characteristics
Parameter
Test conditions Min.
Typ.⁽¹⁾
TSDr
Temperature sensor output
change vs. temperature
TODR Temperature refresh rate
-
Top
Operating temperature range
8
M_ODR
[2:0]⁽²⁾
-40
1. Typical specifications are not guaranteed.
2. Refer to Table 47: Magnetic data rate configuration.
Max.
+85
Unit
LSB/°C
Hz
°C
b. The product is factory calibrated at 2.5 V.
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