SI53365 Datasheet, PDF (5/14 Pages) Silicon Laboratories – 1:8 LOW JITTER CMOS CLOCK BUFFER

Si53365
Table 6. Thermal Conditions
Parameter
Thermal Resistance,
Junction to Ambient
Symbol
θ_JA
Test Condition
Still air
Value
124.4
Unit
°C/W
Table 7. Absolute Maximum Ratings
Parameter
Storage Temperature
Supply Voltage
Input Voltage
Symbol
T_S
V_DD
V_IN
Test Condition
Min
Typ
Max
Unit
–55
—
150
°C
–0.5
—
3.8
V
–0.5
—
V_DD+
V
0.3
Output Voltage
V_OUT
—
—
V_DD+
V
0.3
ESD Sensitivity
HBM
HBM, 100 pF, 1.5 kΩ
2000
—
—
V
ESD Sensitivity
CDM
500
—
—
V
Peak Soldering Reflow T_PEAK Pb-Free; Solder reflow profile
—
—
260
°C
Temperature
per JEDEC J-STD-020
Maximum Junction
T_J
Temperature
—
—
125
°C
Note: Stresses beyond those listed in this table may cause permanent damage to the device. Functional operation
specification compliance is not implied at these conditions. Exposure to maximum rating conditions for extended
periods may affect device reliability.
Rev. 1.0
5