SI53365 Datasheet, PDF (3/14 Pages) Silicon Laboratories – 1:8 LOW JITTER CMOS CLOCK BUFFER

Si53365
1. Electrical Specifications
Table 1. Recommended Operating Conditions
Parameter
Symbol
Test Condition
Ambient Operating
T_A
Temperature
Supply Voltage Range
V_DD
LVCMOS
Min
Typ
Max Unit
–40
—
85
°C
1.71
1.8
1.89 V
2.38
2.5
2.63 V
2.97
3.3
3.63 V
Table 2. Input Clock Specifications
(V_DD=1.8 V ± 5%, 2.5 V ± 5%, or 3.3 V ± 10%, T_A=–40 to 85 °C)
Parameter
LVCMOS Input High Volt-
age
Symbol
V_IH
Test Condition
V_DD = 2.5 V± 5%, 1.8 V± 5%,
3.3 V± 10%
LVCMOS Input Low Volt-
age
V_IL
V_DD = 2.5 V± 5%, 1.8 V± 5%,
3.3 V± 10%
Input Capacitance
C_IN CLK pins with respect to GND
Min
V_DD x 0.7
—
—
Typ
Max Unit
—
—
V
— V_DD x 0.3 V
5
—
pF
Table 3. DC Common Characteristics
(V_DD = 1.8 V ± 5%, 2.5 V ± 5%, or 3.3 V ± 10%,T_A = –40 to 85 °C)
Parameter
Symbol
Test Condition
Supply Current
I_DD
Input High Voltage
V_IH
OE
Input Low Voltage
V_IL
OE
Internal Pull-up
R_UP
OE
Resistor
Min
Typ
Max
Unit
—
150
mA
0.8 x V_DD
—
—
V
—
—
0.2 x V_DD
V
—
25
—
kΩ
Table 4. Output Characteristics—LVCMOS
(V_DD = 1.8 V ± 5%, 2.5 V ± 5%, or 3.3 V ± 10%,T_A = –40 to 85 °C)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Output Voltage High V_OH
I_OH = –12 mA
0.8x V_DD
—
—
V
Output Voltage Low
V_OL
I_OL = 12 mA
—
—
0.2 x V_DD
V
Rev. 1.0
3