EFM8UB2 Datasheet, PDF (17/50 Pages) Silicon Laboratories – The EFM8UB2 highlighted features are listed below

4.2 Thermal Conditions
EFM8UB2 Data Sheet
Electrical Specifications
Table 4.15. Thermal Conditions
Parameter
Symbol Test Condition
Min
Typ
Thermal Resistance
θ_JA
QFP48 Packages
QFP32 Packages
─
60
─
80
QFN32 Packages
─
28
Note:
1. Thermal resistance assumes a multi-layer PCB with any exposed pad soldered to a PCB pad.
Max
Unit
─
°C/W
─
°C/W
─
°C/W
4.3 Absolute Maximum Ratings
Stresses above those listed in Table 4.16 Absolute Maximum Ratings on page 16 may cause permanent damage to the device. This
is a stress rating only and functional operation of the devices at those or any other conditions above those indicated in the operation
listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. For
more information on the available quality and reliability data, see the Quality and Reliability Monitor Report at http://www.silabs.com/
support/quality/pages/default.aspx.
Table 4.16. Absolute Maximum Ratings
Parameter
Symbol Test Condition
Min
Max
Unit
Ambient Temperature Under Bias
T_BIAS
-55
125
°C
Storage Temperature
T_STG
-65
150
°C
Voltage on VDD
V_DD
GND-0.3
4.2
V
Voltage on VREGIN
V_REGIN
GND-0.3
5.8
V
Voltage on I/O, RSTb, or VBUS pins V_IN
V_DD > 2.2 V
GND-0.3
5.8
V
V_DD < 2.2 V
GND-0.3 V_DD+3.6
V
Total Current Sunk into Supply Pin
I_VDD
─
500
mA
Total Current Sourced out of Ground I_GND
Pin
500
─
mA
Current Sourced or Sunk by any I/O I_IO
Pin or RSTb
-100
100
mA
Note:
1. Exposure to maximum rating conditions for extended periods may affect device reliability.
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