EFM8UB2 Datasheet, PDF (12/50 Pages) Silicon Laboratories – The EFM8UB2 highlighted features are listed below

EFM8UB2 Data Sheet
Electrical Specifications
Parameter
Symbol Test Condition
Min
Typ
Max
Note:
1. Does not include sequencing time before and after the write/erase operation, which may be multiple SYSCLK cycles.
2. Flash can be safely programmed at any voltage above the supply monitor threshold (V_VDDM).
3. Data Retention Information is published in the Quarterly Quality and Reliability Report.
Units
Table 4.5. Internal Oscillators
Parameter
Symbol Test Condition
High Frequency Oscillator 0 (48 MHz)
Oscillator Frequency
f_HFOSC0
Full Temperature and Supply
Range
Power Supply Sensitivity
PSS_HFOS T_A = 25 °C
C0
Temperature Sensitivity
TS_HFOSC0 V_DD = 3.0 V
Low Frequency Oscillator (80 kHz)
Oscillator Frequency
f_LFOSC
Full Temperature and Supply
Range
Power Supply Sensitivity
PSS_LFOSC T_A = 25 °C
Temperature Sensitivity
TS_LFOSC V_DD = 3.0 V
Table 4.6. Crystal Oscillator
Min
47.3
—
—
75
—
—
Parameter
Crystal Frequency
Symbol
f_XTAL
Test Condition
Min
0.02
Table 4.7. External Clock Input
Parameter
Symbol Test Condition
Min
External Input CMOS Clock
f_CMOS
0
Frequency (at EXTCLK pin)
Table 4.8. ADC
Parameter
Symbol Test Condition
Min
Resolution
N_bits
Throughput Rate
f_S
—
Tracking Time
t_TRK
300
SAR Clock Frequency
f_SAR
—
Conversion Time
t_CNV
10-Bit Conversion,
13
Sample/Hold Capacitor
C_SAR
—
Input Mux Impedance
R_MUX
—
Typ
48
110
25
80
0.05
65
Typ
—
Typ
—
Typ
10
—
—
—
—
30
5
Max
Unit
48.7
MHz
—
ppm/V
—
ppm/°C
85
kHz
—
%/V
—
ppm/°C
Max
Unit
30
MHz
Max
Unit
48
MHz
Max
Unit
Bits
500
ksps
—
ns
8.33
MHz
—
Clocks
—
pF
—
kΩ
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