EFM8UB2 Datasheet, PDF (11/50 Pages) Silicon Laboratories – The EFM8UB2 highlighted features are listed below

EFM8UB2 Data Sheet
Electrical Specifications
Parameter
Symbol Test Condition
Min
Typ
Max
Unit
ADC0 Supply Current
I_ADC
Operating at 500 ksps
V_DD = 3.0 V
—
750
1000
μA
On-chip Precision Reference
I_VREFP
—
75
—
µA
Temperature Sensor
I_TSENSE
—
35
—
μA
Comparator 0 (CMP0, CMP1)
I_CMP
CPMD = 11
CPMD = 10
—
1
—
μA
—
4
—
μA
CPMD = 01
—
10
—
μA
CPMD = 00
—
20
—
μA
Voltage Supply Monitor (VMON0) I_VMON
—
15
50
μA
Regulator Bias Currents
I_VREG
Both Regulators in Normal Mode
—
200
—
μA
Both Regulators in Low Power
Mode
—
100
—
μA
5 V Regulator Off, Internal LDO in
—
150
—
μA
Low Power Mode
USB (USB0) Full-Speed
I_USB
Active
—
8
—
mA
Note:
1. Currents are additive. For example, where I_DD is specified and the mode is not mutually exclusive, enabling the functions increa-
ses supply current by the specified amount.
2. Includes supply current from regulators, supply monitor, and High Frequency Oscillator.
3. Includes supply current from regulators, supply monitor, and Low Frequency Oscillator.
Table 4.3. Reset and Supply Monitor
Parameter
Symbol Test Condition
Min
VDD Supply Monitor Threshold
V_VDDM
2.60
VDD Ramp Time
t_RMP
Time to V_DD > 2.7 V
—
Reset Delay from non-POR source t_RST
Time between release of reset
—
source and code execution
RST Low Time to Generate Reset t_RSTL
15
Missing Clock Detector Response t_MCD
F_SYSCLK >1 MHz
80
Time (final rising edge to reset)
VDD Supply Monitor Turn-On Time t_MON
—
Table 4.4. Flash Memory
Parameter
Symbol Test Condition
Min
Write Time¹
t_WRITE
One Byte
10
Erase Time¹
t_ERASE
One Page
10
V_DD Voltage During Programming^{2 V}PROG
2.7
Endurance (Write/Erase Cycles) N_WE
10k
Typ
2.65
—
—
—
580
—
Typ
15
15
—
100k
Max
Unit
2.70
V
1
ms
250
μs
—
μs
800
μs
100
μs
Max
Units
20
μs
22.5
ms
3.6
V
—
Cycles
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