HYB511000BJ- Datasheet, PDF (8/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
AC Characteristics (cont’d) ^{4) 13)}
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
-50
min. max.
RAS to column address t_RAD
15
25
delay time
12)
CAS to RAS precharge t_CRP
5
–
time
CAS precharge time (fast t_CP
page mode)
10
–
Row address
setup time
t_ASR
0
–
Row address
hold time
t_RAH
10
–
Column address setup t_ASC
0
–
time
Column address hold
t_CAH
15
–
time
Column address to RAS t_RAL
lead time
25
–
Read command setup
t_RCS
0
–
time
Read command hold
t_RCH
0
–
time
8)
Read command hold time t_RRH
0
–
referenced to RAS
8)
Write command hold time t_WCH
10
–
Write command pulse
t_WP
width
10
–
Write command to RAS t_RWL
15
–
lead time
Write command to CAS t_CWL
15
–
lead time
Data setup time
Data hold time
9) _tDS
9) _tDH
0
–
10
–
Refresh period
t_REF
–
8
Refresh period for
L-version only
t_REF
–
64
Limit Values
-60
min. max.
15
30
-70
min. max.
15
35
5
–
5
–
10
–
10
–
0
–
0
–
10
–
10
–
0
–
0
–
15
–
15
–
30
–
35
–
0
–
0
–
0
–
0
–
0
–
0
–
10
–
10
–
15
–
15
–
15
–
20
–
15
–
20
–
0
–
15
–
–
8
–
64
0
–
15
–
–
8
–
64
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ms
ms
Semiconductor Group
40