HYB511000BJ- Datasheet, PDF (2/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
The HYB 511000BJ/BJL is the new generation dynamic RAM organized as 1 048 576 words by
1-bit. The HYB 511000BJ/BJL utilizes CMOS silicon gate process technology as well as advanced
circuit techniques to provide wide operating margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 511000BJ/BJL to be packaged in a standard plastic
P-SOJ-26/20. This package size provides high system bit densities and is compatible with
commonly used automatic testing and insertion equipment. System oriented features include single
+ 5 V (± 10 %) power supply, direct interfacing with high-performance logic device families such as
Schottky TTL. “Test Mode” function is implemented. The HYB 511000BJL are specially selected for
low power battery backup applications.
Pin Definitions and Functions
Pin No.
A0-A9
RAS
DI
DO
CAS
WE
V_CC
V_SS
TF
N.C.
Function
Address Inputs
Row Address Strobe
Data In
Data Out
Column Address Strobe
Read/Write Input
Power Supply (+ 5 V)
Ground (0 V)
Test Function
No Connection
Semiconductor Group
34