HYB511000BJ- Datasheet, PDF (1/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

1 M × 1-Bit Dynamic RAM
Low Power 1 M × 1-Bit Dynamic RAM
HYB 511000BJ-50/-60/-70
HYB 511000BJL-50/-60/-70
Advanced Information
• 1 048 576 words by 1-bit organization
• Fast access and cycle time
50 ns access time
95 ns cycle time (-50 version)
60 ns access time
130 ns cycle time (-60 version)
70 ns access time
130 ns cycle time (-70 version)
• Fast page mode cycle time
35 ns (-50 version)
40 ns (-60 version)
45 ns (-70 version)
• Low power dissipation
max. 495 mW active (-50 version)
max. 440 mW active (-60 version)
max. 385 mW active (-70 version)
max. 5.5 mW standby
max. 1.1 mW standby for L-version
• Single + 5 V (± 10 %) supply with a built-in
V_BB generator
• Output unlatched at cycle end allows two-
dimensional chip selection
• Common I/O capability using “early write”
operation
• Read-modify-write, CAS-before-RAS
refresh, RAS-only refresh, hidden-refresh,
fast page mode capability and test mode
capability
• All inputs, outputs and clocks
TTL-compatible
• 512 refresh cycles/8 ms
512 refresh cycles/64 ms
for L-version only
• Plastic Packages: P-SOJ-26/20-1
Ordering Information
Type
HYB 511000BJ-50
HYB 511000BJ-60
HYB 511000BJ-70
HYB 511000BJL-50
HYB 511000BJL-60
HYB 511000BJL-70
Ordering Code
Q67100-Q1056
Q67100-Q518
Q67100-Q519
on request
Q67100-Q526
Q67100-Q527
Package
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
P-SOJ-26/20-1
Description
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
DRAM (access time 50 ns)
DRAM (access time 60 ns)
DRAM (access time 70 ns)
Semiconductor Group
33
01.95