HYB511000BJ- Datasheet, PDF (5/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
Absolute Maximum Ratings
Operating temperature range .........................................................................................0 to + 70 ˚C
Storage temperature range......................................................................................– 55 to + 150 ˚C
Soldering temperature ............................................................................................................260 ˚C
Soldering time .............................................................................................................................10 s
Input/output voltage ........................................................................................................ – 1 to + 7 V
Test Function Input voltage ....................................................................................... – 1 to + 10.5 V
Power supply voltage...................................................................................................... – 1 to + 7 V
Power dissipation..................................................................................................................... 0.6 W
Data out current (short circuit) ................................................................................................ 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
DC Characteristics
T_A = 0 to 70 ˚C; V_SS = 0 V; V_CC = 5 V ± 10 %
Parameter
Input high voltage
Input low voltage
Test enable input high voltage
Test disable input low voltage
Output high voltage (I_OUT = – 5 mA)
Output low voltage (I_OUT = 4.2 mA)
Input leakage current, any input except TF
(0 V ≤ V_IN ≤ 6.5 V, all other pins = 0 V)
Output leakage current
(DO is disabled, 0 V ≤ V_OUT ≤ 5.5 V)
Average V_CC supply current:
-50 version
-60 version
-70 version
(RAS, CAS, address cycling: t_RC = t_RC min.)
Standby V_CC supply current (RAS = CAS = V_IH)
Symbol
V_IH
V_IL
V_IH(TF)
V_IL(TF)
V_OH
V_OL
I_I(L)
I_O(L)
I_CC1
I_CC2
Limit Values
min.
max.
2.4
6.5
– 1.0 0.8
V_CC + 4.5 10.5
– 1.0
V_CC + 1.0
2.4
–
–
0.4
– 10
10
– 10
10
–
90
–
80
–
70
–
2
Unit
V
V
V
V
V
V
µA
µA
mA
mA
mA
mA
Test
Condition
1)
1)
1)
1)
1)
1)
1)
1)
2) 3)
2) 3)
2) 3)
–
Semiconductor Group
37