HYB511000BJ- Datasheet, PDF (7/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
AC Characteristics ^{4) 13)}
T_A = 0 to 70 ˚C; V_CC = 5 V ± 10 %; t_T = 5 ns
Parameter
Symbol
Limit Values
Unit
-50
-60
-70
min. max. min. max. min. max.
Random read or write
t_RC
95
–
110 –
130 –
ns
cycle time
Read-write cycle time
t_RWC
115 –
130 –
155 –
ns
Fast page mode cycle t_PC
35
–
40
–
45
–
ns
time
Fast page mode read- t_PRWC 55
–
60
–
70
–
ns
write cycle time
Access time from
t_RAC
–
50
–
60
–
70
ns
RAS
6) 11)
Access time from
t_CAC
–
15
–
15
–
20
ns
CAS
6) 11)
Access time from column t_AA
–
25
–
30
–
35
ns
address
6) 12)
Access time from CAS t_CPA
–
30
–
35
–
40
ns
precharge
6)
CAS to output in low-Z ⁶⁾ t_CLZ
0
–
0
–
0
–
ns
Output buffer turn-off
t_OFF
0
15
0
20
0
20
ns
delay
7)
Transition time
(rise and fall)
t_T
5)
3
50
3
50
3
50
ns
RAS precharge time
t_RP
35
–
40
–
50
–
ns
RAS pulse width
t_RAS
50
10.000 60
10.000 70
10.000 ns
RAS pulse width (fast
t_RASP
50
100.000 60
100.000 70
100.000 ns
page mode)
RAS hold time
t_RSH
15
–
15
–
20
–
ns
CAS hold time
t_CSH
50
–
60
–
70
–
ns
RAS hold time from CAS t_RHCP
30
–
35
–
45
–
ns
precharge (FPM)
CAS precharge to WE t_CPWD 30
–
35
–
45
–
ns
delay time (FPM RMW)
CAS pulse width
t_CAS
15
10.000 15
10.000 20
10.000 ns
RAS to CAS delay
t_RCD
20
35
20
45
20
50
ns
time
11)
Semiconductor Group
39