HYB511000BJ- Datasheet, PDF (10/22 Pages) Siemens Semiconductor Group – 1 M x 1-Bit Dynamic RAM Low Power 1 M ´ 1-Bit Dynamic RAM

HYB 511000BJ/BJL-50/-60/-70
1 M × 1-DRAM
Notes :
1) All voltages are referenced to V_SS .
2) I_CC1 , I_CC3 , I_CC4, I_CC6, I_CC7 depend on cycle rate.
3) I_CC1 and I_CC4 depend on output loading. Specified values are measured with the output open.
4) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles before proper device operation
is achieved. In case of using internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles
instead of 8 RAS cycles are required.
5) V_IH (min.) and V_IL (max.) are reference levels for measuring timing of input signals. Transition times are also
measured between V_IH and V_IL .
6) Measured with a load equivalent to 2 TTL loads and 100 pF.
7) t_OFF (max.) defines the time at which the output achieves the open-circuit conditions and is not referenced to
output voltage levels.
8) Either t_RCH or t_RRH must be satisfied for a read cycle.
9) These parameters are referenced to the CAS leading edge in early write cycles and to the WE leading edge
in read-write cycles.
10) t_WCS , t_RWD , t_CWD and t_AWD are not restrictive operating parameters. They are included in the data sheet as
electrical characteristics only.
If t_WCS ≥ t_WCS (min.), the cycle is an early write cycle and data out pin will remain open-circuit (high impedance)
through the entire cycle; if t_RWD ≥ t_RWD (min.), t_CWD ≥ t_CWD (min.) and t_AWD ≥ t_AWD (min.), the cycle is a read-write
cycle and DO will contain data read from the selected cell. If neither of the above sets of conditions is satisfied,
the condition of DO (at access time) is indeterminate.
11) Operation within the t_RCD (max.) limit insures that t_RAC (max.) can be met. t_RCD (max.) is specified as a reference
point only. If t_RCD is greater than the specified t_RCD (max.) limit, then access time is controlled by t_CAC .
12) Operation within the t_RAD (max.) limit insures that t_RAC (max.) can be met. t_RAD (max.) is specified as a reference
point only. If t_RAD is greater than the specified t_RAD (max.) limit, then access time is controlled by t_AA .
13) AC measurements assume t_T = 5ns.
Semiconductor Group
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