HYB3164805BJ Datasheet, PDF (8/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
DC-Characteristics (contd’ )
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V
Parameter
Symbol refresh version Unit Note
4k row 8k row
Operating Current
I_CC1
-40 ns version
-50 ns version
-
-60 ns version
(RAS, CAS, address cycling: tRC = tRC min.)
135
85 mA 2) 3) 4)
110
70 mA
90
60 mA
Standby Current (RAS=CAS= Vih)
I_CC2
RASOnlyRefresh Current:
-
I_CC3
-40 ns version
-50 ns version
-60 ns version
(RAS cycling: CAS = VIH: tRC = tRC min.)
2
2 mA –
135
85 mA 2) 4)
110
70 mA
90
60 mA
Hyper Page Mode (EDO) Current:
I_CC4
-40 ns version
-50 ns version
-60 ns version
(RAS = V_IL, CAS, address cycling: tHPC=tHPC min.)
Standby Current (RAS=CAS= Vcc-0.2V)
I_CC5
Standby Current (L-Version)
I_CC5
(RAS=CAS= Vcc-0.2V)
100
100 mA 2) 3) 4)
65
65 mA
45
45
1
1 mA –
200
200 µA –
CAS Before RAS Refresh Current
I_CC6
-40 ns version
-50 ns version
-60 ns version
(RAS, CAS cycling: tRC = tRC min.)
135
85 mA 2) 4)
110
70 mA
90
60
Self Refresh Current (L-version only)
I_CC7
(CBR cycle with tRAS>TRASSmin, CAS held low,
WE = Vcc-0.2V, Address and Din=Vcc-0.2V or 0.2V)
400
400 µA
Capacitance
T_A = 0 to 70 °C,V_CC = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Symbol
Limit Values
Unit
min.
max.
Input capacitance (A0 to A11,A12)
Input capacitance (RAS, CAS, WE, OE)
I/O capacitance (I/O1-I/O8)
C_I1
–
5
pF
C_I2
–
7
pF
C_IO
–
7
pF
Semiconductor Group
8