HYB3164805BJ Datasheet, PDF (26/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
V
IH
RAS
VIL
tRC
tRAS
tRCD
tRSH
V
IH
CAS
VIL
V
IH
Address
VIL
tRAH
tASR
tRAD
tASC
tCAH
Row
Column
tWCS
tWCH
V
tWP
IH
WE
VIL
V
I/O
IH
(Input) _VIL
tDS
tDH
Valid Data
tRC
tRP
tRP
tRAS
tCHR
tCRP
tWRP tWRH
tASR
Row
V
I/O
OH
(Output) _VOL
HI-Z
“H” or “L”
WL12
Hidden Refresh Early Write Cycle
Semiconductor Group
26