HYB3164805BJ Datasheet, PDF (21/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
tRAS
V
IH
RAS
VIL
tRCD
CAS
tCRP
V
IH
VIL
tCSH
tHPC
tCAS
tCP
t
CAS
Address
tASR
tRAH t_ASC ^tCAH
V
IH
VIL
Row Column 1
tRAD
t_CWL
tASC tCAH
Column 2
t_CWL
tRSH
t_CP
tCAS
tRAL
tASC tCAH
Column N
t_CWL
tRCS
t_RCS
t_RCS
t_RWL
VIH
WE
VIL
tWP
tWP
tWP
tRP
tCRP
V
OH
OE
VOL
I/O
V
IH
(Input) _VIL
tOEH
tOEH
t_OEH
tODD
tODD
tDS t_DH
tODD
Data In
1
tDS _tDH
Data In
2
tDS t_DH
Data In
N
“H” or “L”
WL16
Hyper Page Mode (EDO) Late Write Cycle
Semiconductor Group
21