HYB3164805BJ Datasheet, PDF (3/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
P-SOJ-32-1 (400 mil)
P-TSOPII-32-1 (400 mil)
VCC
I/O1
I/O2
I/O3
I/O4
N.C.
VCC
WE
R. AS
A0
A1
A2
A3
A4
A5
VCC
O
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 ^VSS
31 ^I/O8
30 ^I/O7
29 ^I/O6
28 I/O5
27 VSS
26 CAS
25 ^OE
24 ^{A12 / N.C. *}
23 ^A11
22 ^A10
21 A9
20 ^A8
19 ^A7
18 ^A6
17 VSS
* Pin 24 is A12 for HYB 3164805BJ/BT(L) and N.C. for HYB 3165805BJ/BT(L)
Pin Configuration
Pin Names
A0-A12
A0-A11
RAS
OE
I/O1-I/O8
CAS
WE
Vcc
Vss
Address Inputs for 8k-refresh version HYB 3164805BJ/BT(L)
Address Inputs for 4k-refresh version HYB 3165805BJ/BT(L)
Row Address Strobe
Output Enable
Data Input/Output
Column Address Strobe
Read/Write Input
Power Supply ( + 3.3V)
Ground
Semiconductor Group
3