HYB3164805BJ Datasheet, PDF (1/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

8M x 8-Bit Dynamic RAM
(4k & 8k Refresh, EDO-version)
HYB 3164805BJ/BT(L) -40/-50/-60
HYB 3165805BJ/BT(L) -40/-50/-60
Premininary Information
• 8 388 608 words by 4-bit organization
• 0 to 70 °C operating temperature
• Hyper Page Mode - EDO - operation
• Performance:
-40 -50 -60
t_RAC RAS access time
40
t_CAC CAS access time
10
t_AA Access time from address 20
t_RC Read/write cycle time
69
t_HPC Hyper page mode (EDO)
16
cycle time
50
60 ns
13
15 ns
25
30 ns
84 104 ns
20
25 ns
• Single + 3.3 V (± 0.3V) power supply
• Low power dissipation:
max. 306 active mW ( HYB 3164805BJ/BT(L)-40)
max. 252 active mW ( HYB 3164805BJ/BT(L)-50)
max. 216 active mW ( HYB 3164805BJ/BT(L)-60)
max. 486 active mW ( HYB 3165805BJ/BT(L)-40)
max. 396 active mW ( HYB 3165805BJ/BT(L)-50)
max. 324 active mW ( HYB 3165805BJ/BT(L)-60)
7.2 mW standby (LVTTL)
3.6 mW standby (LVMOS)
720 µA standby for L-version
• Read, write, read-modify-write, CAS-before-RAS refresh (CBR),
RAS-only refresh, hidden refresh
• Self refresh (L-version only)
• 8192 refresh cycles/128 ms , 13 R/ 10C addresses (HYB 3164805BJ/BT)
4096 refresh cycles/ 64 ms , 12 R/ 11C addresses (HYB 3165805BJ/BT)
• 128 msec refresh period for L-versions
• Plastic Package: P-SOJ-32-1 400 mil HYB 3164(5)400BJ
P-TSOPII-32-1 400 mil
HYB 3164(5)400BT(L)
Semiconductor Group
1
12.97