HYB3164805BJ Datasheet, PDF (7/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
Absolute Maximum Ratings
Operating temperature range.............................................................................................. 0 to 70 °C
Storage temperature range......................................................................................... – 55 to 150 °C
Input/output voltage.................................................................................. -0.5 to min (Vcc+0.5,4.6) V
Power supply voltage.................................................................................................... -0.5V to 4.6 V
Power dissipation............................................................................................................... .....0.62 W
Data out current (short circuit)................................................................................................ ..50 mA
Note
Stresses above those listed under „Absolute Maximum Ratings“may cause permanent damage of
the device. Exposure to absolute maximum rating conditions for extended periods may effect device
reliability.
DC Characteristics
T_A = 0 to 70 °C, V_SS = 0 V, V_CC = 3.3 V ± 0.3 V
Parameter
Input high voltage
Input low voltage
Output high voltage (LVTTL)
Output „H“level voltage (Iout = -2mA)
Output low voltage (LVTTL)
Output „L“level voltage (Iout = +2mA)
Output high voltage (LVCMOS)
Output „H“level voltage (Iout = -100uA)
Ouput low voltage (LVCMOS)
Output „L“level voltage (Iout = +100uA)
Input leakage current,any input
(0 V < Vin < Vcc , all other pins = 0 V
Output leakage current
(DO is disabled, 0 V < Vout < Vcc )
Symbol
V_IH
V_IL
V_OH
Limit Values
min.
max.
2.0 Vcc+0.3
– 0.3
0.8
2.4
–
Unit Note
V 1)
V 1)
V
V_OL
–
0.4
V
V_OH
Vcc-0.2
-
V
V_OL
-
0.2
V
I_I(L)
–2
2
µA
I_O(L)
–2
2
µA
Semiconductor Group
7