HYB3164805BJ Datasheet, PDF (2/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
This HYB3164(5)805B is a 64 MBit dynamic RAM organized 8 388 608 by 8 bits. The device is
fabricated in SIEMENS’most advanced 0,25 µm-CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)805B operates with a single 3.3 +/-0.3V power supply and interfaces with either LVTTL
or LVCMOS levels. Multiplexed address inputs permit the HYB 3164(5)400B to be packaged in a
400mil wide SOJ-32 or TSOP-32 plastic package. These packages provide high system bit
densities and are compatible with commonly used automatic testing and insertion equipment.The
HYB3164(5)805BTL parts have a very low power „sleep mode“supported by Self Refresh.
Ordering Information
Type
8k-refresh versions:
HYB 3164805BJ-40
HYB 3164805BJ-50
HYB 3164805BJ-60
HYB 3164805BT-40
HYB 3164805BT-50
HYB 3164805BT-60
HYB 3164805BTL-50
HYB 3164805BTL-60
4k-refresh versions:
HYB 3165805BJ-40
HYB 3165805BJ-50
HYB 3165805BJ-60
HYB 3165805BT-40
HYB 3165805BT-50
HYB 3165805BT-60
HYB 3165805BTL-50
HYB 3165805BTL-60
Ordering
Code
Package
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-SOJ-32-1
P-SOJ-32-1
P-SOJ-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
P-TSOPII-32-1
Descriptions
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 40 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
400 mil DRAM (access time 50 ns)
400 mil DRAM (access time 60 ns)
Semiconductor Group
2