HYB3164805BJ Datasheet, PDF (4/29 Pages) Siemens Semiconductor Group – 8M x 8-Bit Dynamic RAM

TRUTH TABLE
HYB3164(5)805BJ/BT(L)-40/-50/-60
8M x 8-DRAM
FUNCTION
RAS CAS
Standby
H
Read
L
Early-Write
L
Delayed-Write
L
Read-Modify-Write
L
Hyper Page Mode Read 1st Cycle L
2nd Cycle L
Hyper Page Mode Write 1st Cycle L
2nd Cycle L
Hyper Page Mode RMW 1st Cycle L
2st Cycle L
RAS only refresh
L
CAS-before-RAS refresh
H-L
Test Mode Entry
H-L
Hidden Refresh
READ L-H-L
WRITE L-H-L
Self Refresh
(L-version only)
H-L
H-X
L
L
L
L
H-L
H-L
H-L
H-L
H-L
H-L
H
L
L
L
L
L
WE
X
H
L
H-L
H-L
H
H
L
L
H-L
H-L
X
H
L
H
L
H
OE
X
L
X
H
L-H
L
L
X
X
L-H
L-H
X
X
X
L
X
X
ROW COL
ADDR ADDR
I/O1-
I/O4
X
X High Impedance
ROW COL
Data Out
ROW COL
Data In
ROW COL
Data In
ROW COL Data Out, Data In
ROW COL
Data Out
n/a COL
Data Out
ROW COL
Data In
n/a COL
Data In
ROW COL Data Out, Data In
n/a COL Data Out, Data In
ROW n/a High Impedance
X
n/a High Impedance
X
n/a High Impedance
ROW COL
Data Out
ROW COL
Data In
X
X High Impedance
Semiconductor Group
4