HYB39S13620TQ- Datasheet, PDF (24/70 Pages) Siemens Semiconductor Group – Special Mode Registers Two color registers Burst Read with Single Write Operation

HYB 39S16320TQ-6/-7/-8
Capacitance
T_A = 0 to 70 °C; V_DD = 3.3 V ± 0.3 V, f = 1 MHz
Parameter
Input capacitance (A0 to A9, BA)
Input capacitance
(RAS, CAS, WE, CS, CLK, CKE, DQM, DSF)
Output capacitance (DQ)
Symbol
C_I1
C_I2
max. Values Unit
4
pF
4
pF
C_IO
6
pF
Operating Currents
T_A = 0 to 70 °C, V_DD = 3.3 V ± 0.3 V
(Recommended Operating Conditions unless otherwise noted)
Parameter & Test
Condition
Symb. -6 -7 -8 Unit
max.
Operating current
CAS Latency = 3 _{tRC ≥tRC(MIN.),}
I_CC1
CAS Latency = 2 _{tCK ≥ tCK(MIN.), IO = 0 mA}
Precharge standby current CKE ≤ V_IL(MAX.) t_CK = t_CK(MIN.) I_CC2P
in Power Down Mode
CKE ≤ V_IL(MAX.), t_CK = infinite I_CC2PS
Precharge standby current CKE ≥ V_IH(MIN.) t_CK ≥ t_CK(MIN.), I_CC2N
in Non Power Down Mode input changed once in 30 ns
CKE ≥ V_IH(MIN.), t_CK = infinite, I_CC2NS
no input change
200 200 180 mA
180 180 170
3 3 3 mA
222
60 60 60 mA
15 15 15 mA
Active standby current in
Power Down Mode
Active standby current in
Non-Power Down Mode
CKE ≤ V_IL(MAX.), t_CK ≥t_CK(MIN.) I_CC3P 3
3
3
mA
CKE ≤ V_IL(MAX.), t_CK = infinite I_CC3PS 3 3 3 mA
CKE ≥ V_IH(MIN.), t_CK ≥ t_CK(MIN.) I_CC3N 90 90 90 mA
input changed every 30 ns
CKE ≥ V_IH(MIN.), t_CK = infinite, I_CC3NS 30 30 25 mA
no input change
Burst Operating Current
CAS Latency = 3 Burst Length = full page
t_RC = infinite
CAS Latency = 2 t_CK ≥ t_CK(MIN.), I_O = 0 mA,
2 banks interleave
I_CC4 ^{200 200 190 mA}
200 200 190 mA
Auto (CBR) Refresh
Current
CAS Latency = 3 t_RC ≥ t_RC(MIN.)
CAS Latency = 2
I_CC5 ^{170 170 160 mA}
160 160 160
Self Refresh Current
CKE ≤ 0,2 V
2 2 2 mA
Operating Current
(Block Write)
t_CK ≥ t_CK(MIN.), I_O = 0 mA
t_BWC = t_BWC(MIN.)
200 200 190 mA
Note
2
2
2
2, 3
2
Semiconductor Group
24
1998-10-01