HYB39S13620TQ- Datasheet, PDF (21/70 Pages) Siemens Semiconductor Group – Special Mode Registers Two color registers Burst Read with Single Write Operation

HYB 39S16320TQ-6/-7/-8
Bit Mask mapping of DQ bits
Address
within Written
Block
Byte 3
0
DQ24
1
DQ25
2
DQ26
3
DQ27
4
DQ28
5
DQ29
6
DQ30
7
DQ31
Byte within Data Word
Byte 2
Byte 1
DQ16
DQ17
DQ18
DQ19
DQ20
DQ21
DQ22
DQ23
DQ8
DQ9
DQ10
DQ11
DQ12
DQ13
DQ14
DQ15
Byte 0
DQ0
DQ1
DQ2
DQ3
DQ4
DQ5
DQ6
DQ7
The table shows the masking of data caused by the registered value on the DQ pins, when data is
transfered from Color Register to the 8 succeeding memory locations addressed in the Write Block
command.
When a “1” is registered, the Color Register data will be written to the corresponding DRAM cells,
subject to the DQM and the WPB masking. The overall Block Write mask consists of a combination
of the DQM signals, the WPB mask register and the column/byte mask information.
Block Write Timing Considerations
A Block Write access requires a time period of t_BWC to execute, so in general, the cycle after the
Block Write command should be a NOP. However, Active or Precharge commands to the other
bank are allowed. When following a Block Write with a Precharge command to the same bank, t_BPL
must be met.
Semiconductor Group
21
1998-10-01