HYB39S13620TQ- Datasheet, PDF (20/70 Pages) Siemens Semiconductor Group – Special Mode Registers Two color registers Burst Read with Single Write Operation

HYB 39S16320TQ-6/-7/-8
Symbolic Representation of Write Masking Function
DQ
DQM _&
MR
DRAM
Cell
SPS03710
If a particular bit in the WPB mask register is a “0”, the data appearing on the corresponding DQ
input will be ignored, and the existing data in the corresponding DRAM cell will remain unchanged.
If a mask data is a “1”, the data appearing on the corresponding DQ input will be written to the
corresponding DRAM cell. The overall Write mask consists of a combination of the DQM inputs,
which will mask on a per-byte basis, and the WPB mask register, which masks on a per-bit basis.
If a particular DQM signal was registered high, the corresponding byte will be masked. A given bit
is written if the corresponding DQM signal registered is “0”and the corresponding WPB mask
register bit is “1”.
Note that the DQM Latency for Write is zero.
Block Write (BW)
Each Block Write cycle writes a single data value from a Color Register to the block of eight
consecutive column locations addressed by A7 - A3. If Single Color Register Mode is enabled, the
content of Color Register 0 is written. If both Color Registers are enabled, address pin A0 selects
the desired Color Register. Address A0 = 0 selects Color Register 0, address pin A0 = 1 Color
Register 1. The information on the DQs which is registered coincident with the Block Write
command is used to mask specific column/byte combinations within the block.
Semiconductor Group
20
1998-10-01