KFG5616Q1A-DEB5 Datasheet, PDF (72/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB5)
FLASH MEMORY
3.10.3 Multi-Block Erase Verify Read Operation
After a Multi-Block Erase Operation, verify Erase Operation result of each block with Multi-Block Erase Verify Command combined
with address of each block.
If a failed address is identified, it must be managed in firmware.
Multi Block Erase/ Multi Block Erase Verify Read Flow Chart
Start
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Multi Block Erase’
Command
Add: F220h DQ=0095h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
NO
Final Multi Block
Erase?
YES
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Block Erase
Command’
Add: F220h DQ=0094h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Write ’FBA’ of Flash
Add: F100h DQ=FBA
Write 0 to interrupt register
Add: F241h DQ=0000h
Write ’Multi Block Erase
Verify Read Command’
Add: F220h DQ=0071h
Wait for INT register
low to high transition
Add: F241h DQ=[15]=INT
Read Controller
Status Register
Add: F240h DQ[10]=Error
DQ[10]=0?
NO
YES
Erase completed
Erase Error
NO
Final Multi Block
Erase Address?
YES
Multi Block Erase completed
Multi Block Erase Verify Read
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