KFG5616Q1A-DEB5 Datasheet, PDF (27/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB5)
FLASH MEMORY
2.7.4 External Memory Map Detail Information
The tables below show Word Order Address Map information for the BootRAM and DataRAM main and spare areas.
• BootRAM(Main area)
-0000h~01FFh: 2(sector) x 512byte(NAND main area) = 1KB
0000h~00FFh(512B)
BootM 0
(sector 0 of page 0)
• DataRAM(Main area)
-0200h~05FFh: 4(sector) x 512byte(NAND main area) = 2KB
0200h~02FFh(512B)
DataM 0_0
(sector 0 of page 0)
0300h~03FFh(512B)
DataM 0_1
(sector 1 of page 0)
0100h~01FFh(512B)
BootM 1
(sector 1 of page 0)
0400h~04FFh(512B)
DataM 1_0
(sector 0 of page 1)
0500h~05FFh(512B)
DataM 1_1
(sector 1 of page 1)
• BootRAM(Spare area)
-8000h~800Fh: 2(sector) x 16byte(NAND spare area) = 32B
8000h~8007h(16B)
BootS 0
(sector 0 of page 0)
8008h~800Fh(16B)
BootS 1
(sector 1 of page 0)
• DataRAM(Spare area)
-8010h~802Fh: 4(sector) x 16byte(NAND spare area) = 64B
8010h~8017h(16B)
DataS 0_0
(sector 0 of page 0)
8018h~801Fh(16B)
DataS 0_1
(sector 1 of page 0)
*NAND Flash array consists of 1KB page size and 64KB block size.
8020h~8027h(16B)
DataS 1_0
(sector 0 of page 1)
8028h~802Fh(16B)
DataS 1_1
(sector 1 of page 1)
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