KFG5616Q1A-DEB5 Datasheet, PDF (3/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB5)
1.1 Revision History
Document Title
OneNAND
Revision History
Revision No. History
0.0
1. Initial Issue
1.0
1. Corrected the errata
2. Added Data Protection flow chart.
3. Removed Cache Read Operation.
4. Added additional information on command register.
5. Revised Interrupt status register information.
6. Added INT pin schematic.
7. Changed tPGM1 to 205 from 320us, tPGM2 to 220 from 350us.
8. Revised AC/DC parameters
9. Revised ECC Bypass Description
10. Revised Reset Parameters and Timing Diagrams.
1.1
1. Corrected the errata
2. Revised Invalid Block Table Creation Flow Chart.
3. Revised Multi Block Erase Description.
4. Revised Reset Mode Operation.
FLASH MEMORY
Draft Date
April 17, 2005
May 17, 2005
Remark
Preliminary
Final
Aug 12, 2005
Final
3