KFG5616Q1A-DEB5 Datasheet, PDF (103/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB5)
6.13 Hot Reset Timing
FLASH MEMORY
AVD
A0~A15
DQ0~DQ15
CE
BP(Note 3)
or F220h
00F0h
or 00F3h⁴⁾
OE
WE
tReady2
INT
bit
RDY
High-Z
OneNAND
Operation
Operation or Idle
OneNAND reset
Idle
NOTE:
1. Internal reset operation means that the device initializes internal registers and makes output signals go to default status and bufferRAM data are kept
unchanged after Warm/Hot reset operations.
2. Reset command : Command based reset or Register based reset
3. BP(Boot Partition): BootRAM area [0000h~01FFh, 8000h~800Fh]
4. 00F0h for BP, and 00F3h for F220h
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