KFG5616Q1A-DEB5 Datasheet, PDF (40/113 Pages) Samsung semiconductor – OneNAND Specification FLASH MEMORY

OneNAND256(KFG5616x1A-xxB5)
FLASH MEMORY
2.8.19 System Configuration 1 Register F221h (R, R/W)
This Read/Write register describes the system configuration.
F221h, default = 40C0h
15 14 13 12
R/W
R/W
RM
BRL
11 10
R/W
BL
9
8
7
6
5
4
3
2
1
0
R/W R/W R/W R/W R/W
R
R
ECC
RDY
pol
INT
pol
IOBE
RDY
Conf
Reserved(000)
BWPS
Read Mode (RM)
RM
0
1
Read Mode Information[15]
Item
RM
Burst Read Latency (BRL)
BRL
000
001
010
011
100
101
110
111
Read Mode
Asynchronous read(default)
Synchronous read
Definition
Read Mode
Description
Selects between asynchronous read mode and
synchronous read mode
Latency Cycles
8(N/A)
9(N/A)
10(N/A)
3(up to 40MHz)
4(default, min.)
5
6
7
Burst Read Latency (BRL) Information[14:12]
Item
BRL
Definition
Burst Read Latency
Description
Specifies the access latency in the burst read
transfer for the initial access
40