K4H560438D-GC Datasheet, PDF (5/26 Pages) Samsung semiconductor – DDR 256Mb

256Mb
Block Diagram (8Mbit x 8 I/O x 4 Banks)
DDR SDRAM
CK, CK
ADD
Bank Select
CK, CK
8
WE
Data Input Register
DM
Serial to parallel
16
4Mx16
4Mx16
4Mx16
4Mx16
16
8
x8
DQi
Column Decoder
Latency & Burst Length
LCKE
LRAS LCBR LWE
Programming Register
LCAS
LWCBR
Timing Register
CK, CK
Data Strobe
CK, CK CKE
CS
RAS CAS
WE
Rev. 2.2 Mar. ’03
-5-