K4H560438D-GC Datasheet, PDF (15/26 Pages) Samsung semiconductor – DDR 256Mb

K4H560838D
DDR SDRAM
8M x 8Bit x 4 Banks Double Data Rate SDRAM
GENERAL DESCRIPTION
The K4H560838D is 268,435,456 bits of double data rate synchronous DRAM organized as 4 x 8,388,608 words by 8 bits, fabricated
with SAMSUNG′s high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up
to 333Mb/s per pin. I/O transactions are possible on both edges of DQS. Range of operating frequencies, programmable burst length
and programmable latencies allow the device to be useful for a variety of high performance memory system applications.
Absolute Maximum Rating
Parameter
Symbol
Value
Unit
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 ~ 3.6
V
Voltage on VDD & VDDQ supply relative to VSS
VDD, VDDQ
-1.0 ~ 3.6
V
Storage temperature
TSTG
-55 ~ +150
°C
Power dissipation
PD
1.5
W
Short circuit current
IOS
50
mA
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommend operation condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability
DC Operating Conditions
Recommended operating conditions(Voltage referenced to VSS=0V, TA= 0 to 70°C)
Parameter
Symbol
Min
Max
Supply voltage(for device with a nominal VDD of 2.5V)
VDD
2.3
2.7
I/O Supply voltage
VDDQ
2.3
2.7
I/O Reference voltage
VREF
VDDQ/2-50mV VDDQ/2+50mV
I/O Termination voltage(system)
Input logic high voltage
V_TT
VIH(DC)
VREF-0.04
VREF+0.15
VREF+0.04
VDDQ+0.3
Input logic low voltage
VIL(DC)
-0.3
VREF-0.15
Input Voltage Level, CK and CK inputs
VIN(DC)
-0.3
VDDQ+0.3
Input Differential Voltage, CK and CK inputs
VID(DC)
0.3
VDDQ+0.6
Input crossing point voltage, CK and CK inputs
VIX(DC)
1.15
1.35
Input leakage current
II
-2
2
Output leakage current
IOZ
-5
5
Output High Current(Normal strengh driver)
;V_OUT = V_TT + 0.84V
Output High Current(Normal strengh driver)
;V_OUT = V_TT - 0.84V
Output High Current(Half strengh driver)
;V_OUT = V_TT + 0.45V
Output High Current(Half strengh driver)
;V_OUT = V_TT - 0.45V
IOH
-16.8
IOL
16.8
IOH
-9
IOL
9
Unit
V
V
V
V
V
V
V
V
uA
uA
mA
mA
mA
mA
Note
1
2
4
4
3
5
Rev. 2.2 Mar. ’03
- 15 -