K4H560438D-GC Datasheet, PDF (26/26 Pages) Samsung semiconductor – DDR 256Mb

K4H561638D
AC Operating Test Conditions
(VDD=2.5V, VDDQ=2.5V, TA= 0 to 70°C)
Parameter
Input reference voltage for Clock
Input signal maximum peak swing
Input signal minimum slew rate (for imput only)
Input slew rate (I/O pins)
Input Levels(VIH/VIL)
Input timing measurement reference level
Output timing measurement reference level
Output load condition
Value
0.5 * VDDQ
1.5
0.5
0.5
VREF+0.31/VREF-0.31
VREF
Vtt
See Load Circuit
Vtt=0.5*VDDQ
Output
RT=50Ω
Z0=50Ω
CLOAD=30pF
VREF
=0.5*VDDQ
Output Load Circuit (SSTL_2)
DDR SDRAM
Unit
V
V
V/ns
V/ns
V
V
V
Note
Input/Output Capacitance
(VDD=2.5, VDDQ=2.5V, TA= 25°C, f=1MHz)
Parameter
Input capacitance
(A0 ~ A12, BA0 ~ BA1, CKE, CS, RAS,CAS, WE)
Input capacitance( CK, CK )
Data & DQS input/output capacitance
Input capacitance(DM)
Symbol
Min
CIN1
1.5
CIN2
1.5
COUT
3.5
CIN3
3.5
Max
Delta Cap(max)
Unit
3.5
0.5
pF
3.5
0.25
pF
5.5
pF
0.5
5.5
pF
Rev. 2.2 Mar. ’03
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