K4H560438D-GC Datasheet, PDF (4/26 Pages) Samsung semiconductor – DDR 256Mb

256Mb
Block Diagram (16Mbit x 4 I/O x 4 Banks)
DDR SDRAM
CK, CK
ADD
Bank Select
CK, CK
4
Data Input Register
Serial to parallel
8
8Mx8
8Mx8
8
8Mx8
8Mx8
WE
DM
4
x4
DQi
Column Decoder
Latency & Burst Length
LCKE
LRAS LCBR LWE
Programming Register
LCAS
LWCBR
Timing Register
CK, CK
Data Strobe
CK, CK CKE
CS
RAS CAS
WE
Rev. 2.2 Mar. ’03
-4-