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K4D263238D Datasheet, PDF (3/18 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL | |||
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K4D263238D
128M DDR SDRAM
1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM
with Bi-directional Data Strobe and DLL
FEATURES
⢠2.5V ± 5% power supply
⢠SSTL_2 compatible inputs/outputs
⢠4 banks operation
⢠MRS cycle with address key programs
-. Read latency 3,4 (clock)
-. Burst length (2, 4, 8 and Full page)
-. Burst type (sequential & interleave)
⢠Full page burst length for sequential burst type only
⢠Start address of the full page burst should be even
⢠All inputs except data & DM are sampled at the positive
going edge of the system clock
⢠Differential clock input
⢠No Write Interrupted by Read function
⢠Data I/O transactions on both edges of Data strobe
⢠DLL aligns DQ and DQS transitions with Clock transition
⢠Edge aligned data & data strobe output
⢠Center aligned data & data strobe input
⢠DM for write masking only
⢠Auto & Self refresh
⢠32ms refresh period (4K cycle)
⢠100pin TQFP package
⢠Maximum clock frequency up to 250MHz
⢠Maximum data rate up to 500Mbps/pin
ORDERING INFORMATION
Part NO.
K4D263238D-QC40
K4D263238D-QC50
Max Freq.
250MHz
200MHz
Max Data Rate
500Mbps/pin
400Mbps/pin
Interface
SSTL_2
Package
100 TQFP
GENERAL DESCRIPTION
FOR 1M x 32Bit x 4 Bank DDR SDRAM
The K4D263238D is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 1,048,576 words by
32 bits, fabricated with SAMSUNGâ²s high performance CMOS technology. Synchronous features with Data Strobe allow
extremely high performance up to 2.0GB/s/chip. I/O transactions are possible on both edges of the clock cycle. Range of
operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety
of high performance memory system applications.
-3-
Rev. 1.3 (Jul. 2002)
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