K4D263238D Datasheet, PDF (15/18 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

K4D263238D
128M DDR SDRAM
AC CHARACTERISTICS (I)
Parameter
Row cycle time
Symbol
tRC
-40
Min
Max
15
-
-50
Min
12
Refresh row cycle time
Row active time
RAS to CAS delay for Read
RAS to CAS delay for Write
Row precharge time
Row active to Row active
Last data in to Row precharge
Last data in to Read command
Col. address to Col. address
Mode register set cycle time
Auto precharge write recovery + Precharge
Exit self refresh to read command
Power down exit time
Refresh interval time
tRFC
tRAS
tRCDRD
tRCDWR
tRP
tRRD
tWR
tCDLR
tCCD
tMRD
tDAL
tXSR
tPDEX
tREF
17
10
5
3
5
3
3
2
1
2
8
200
1tCK+tIS
7.8
-
100K
-
-
-
-
-
-
-
-
-
-
-
14
8
4
2
4
2
2
2
1
2
6
200
1tCK+tIS
7.8
Note :1 For normal write operation, even numbers of Din are to be written inside DRAM
Max
-
-
100K
-
-
-
-
-
-
-
-
-
-
-
Unit Note
tCK
tCK
tCK
tCK
tCK
tCK
tCK
tCK
1
tCK
1
tCK
tCK
tCK
tCK
ns
us
- 15 -
Rev. 1.3 (Jul. 2002)