K4D263238D Datasheet, PDF (11/18 Pages) Samsung semiconductor – 1M x 32Bit x 4 Banks Double Data Rate Synchronous DRAM with Bi-directional Data Strobe and DLL

K4D263238D
128M DDR SDRAM
DC CHARACTERISTICS
Recommended operating conditions Unless Otherwise Noted, TA=0 to 65°C)
Parameter
Symbol
Test Condition
Version
-40
-50
Operating Current
(One Bank Active)
ICC1
Burst Lenth=2 tRC ≥ tRC(min)
IOL=0mA, tCC= tCC(min)
245
215
Precharge Standby Current
in Power-down mode
ICC2P
CKE ≤ VIL(max), tCC= tCC(min)
70
60
Precharge Standby Current
in Non Power-down mode
ICC2N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min).
100
90
Active Standby Current
power-down mode
ICC3P
CKE ≤ VIL(max), tCC= tCC(min)
100
80
Active Standby Current in
in Non Power-down mode
ICC3N
CKE ≥ VIH(min), CS ≥ VIH(min),
tCC= tCC(min) .
175
150
Operating Current
( Burst Mode)
ICC4
IOL=0mA ,tCC= tCC(min), Page
Burst, All Banks activated.
630
530
Refresh Current
ICC5
Self Refresh Current
ICC6
tRC ≥ tRFC(min)
CKE ≤ 0.2V
250
230
3
Note: 1. Measured with outputs open.
2. Refresh period is 32ms.
Unit Note
mA
1
mA
mA
mA
mA
mA
mA
2
mA
AC INPUT OPERATING CONDITIONS
Recommended operating conditions(Voltage referenced to VSS=0V, VDD/ VDDQ=2.5V+ 5%, TA=0 to 65°C)
Parameter
Input High (Logic 1) Voltage; DQ
Symbol
Min
Typ
VIH
VREF+0.35
-
Max
-
Unit Note
V
Input Low (Logic 0) Voltage; DQ
VIL
-
-
VREF-0.35
V
Clock Input Differential Voltage; CK and CK
VID
0.7
-
VDDQ+0.6
V
1
Clock Input Crossing Point Voltage; CK and CK
VIX
0.5*VDDQ-0.2
-
0.5*VDDQ+0.2
V
2
Note : 1. VID is the magnitude of the difference between the input level on CK and the input level on CK
2. The value of VIX is expected to equal 0.5*VDDQ of the transmitting device and must track variations in the DC level of the same
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Rev. 1.3 (Jul. 2002)