K4R271669F Datasheet, PDF (19/20 Pages) Samsung semiconductor – 128Mbit RDRAM(F-die)

K4R271669F
Direct RDRAM^™
Capacitance and Inductance
Table 17: RSL Pin Parasitics
Symbol
Parameter and Conditions - RSL pins
Min
Max
Unit
Figure
L_I
RSL effective input inductance
Mutual inductance between any DQA or DQB RSL signals
L₁₂
Mutual inductance between any ROW or COL RSL signals
4.0
nH
Figure 63
0.6
nH
Figure 63
0.6
∆L_I
Difference in L_I value between any RSL pins of a single device.
-
2.0
nH
Figure 63
C_I
RSL effective input capacitance^a
2.0
2.6
pF
Figure 63
C₁₂
Mutual capacitance between any RSL signals.
-
0.2
pF
Figure 63
∆C_I
Difference in C_I value between average of {CTM, CTMN, CFM,
CFMN} and any RSL pins of a single device
0.12
pF
Figure 63
R_I
RSL effective input resistance
4
18
Ω
Figure 63
a. This value is a combination of the device IO circuitry and package capacitances measured at VDD=2.5V and f=400MHz with pin biased at 1.4V.
Table 18: CMOS Pin Parasitics
Symbol
L_{I ,CMOS}
C_{I ,CMOS}
C_{I ,CMOS,SIO}
Parameter and Conditions - CMOS pins
CMOS effective input inductance
CMOS effective input capacitance (SCK,CMD)^a
CMOS effective input capacitance (SIO1, SIO0)^a
Min
Max
Unit
Figure
8.0
nH
1.7
2.1
pF
Figure 63
-
7.0
pF
a. This value is a combination of the device IO circuitry and package capacitances.
Page 17
Version 1.41 Jan. 2004