K4R271669F Datasheet, PDF (15/20 Pages) Samsung semiconductor – 128Mbit RDRAM(F-die)

K4R271669F
Direct RDRAM^™
Symbol
t_TEMP
t_TCEN
t_TCAL
t_TCQUIET
t_PAUSE
Table 11: Timing Conditions
Parameter
Temperature control interval
TCE command to TCAL command
TCAL command to quiet window
Quiet window (no read data)
RDRAM device delay (no RSL operations allowed)
Min
150
2
140
Max
100
-
2
-
200.0
Unit
ms
t_CYCLE
t_CYCLE
t_CYCLE
µs
Figure(s)
Figure 55
Figure 55
Figure 55
Figure 55
page 38
a. MSE/MS are fields of the SKIP register. For this combination (skip override) the tDCW parameter range is effectively 0.0 to 0.0.
b. t_S,MIN and t_H,MIN for other t_CYCLE values can be interpolated between or extrapolated from the timings at the 3 specified t_CYCLE values.
c. With V_IL,CMOS=0.5V_CMOS-0.4V and V_IH,CMOS=0.5V_CMOS+0.4V
d. Effective hold becomes t_H4’=t_H4+[PDNXA•64•t_SCYCLE+t_PDNXB,MAX]-[PDNX•256•t_SCYCLE]
if [PDNX•256•t_SCYCLE] < [PDNXA•64•t_SCYCLE+t_PDNXB,MAX]. See Figure 50.
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Version 1.41 Jan. 2004